Semiconductor device having stacked transistors and decoupling capacitors

摘要

A semiconductor device having transistors formed on different layers of a stack structure includes a stacked capacitor cluster, wherein a stacked capacitor (C1,C2,C3) of the stacked capacitor cluster includes an insulation layer (40,50,61) of a transistor of the semiconductor device, and at least a first conduction layer and a second conduction layer (30,42,45,52,60,63) disposed above and below the insulation layer, wherein the stacked capacitor is a decoupling capacitor of the stacked capacitor cluster connected in parallel between a first line and a second line. The stack structure is used to form SRAM memory cells.