| 摘要 |
FIELD: measurement technology; small-size and low-pressure semiconductor transducers suited to operate at high temperatures. ^ SUBSTANCE: proposed pressure transducer characterized in high sensitivity while maintaining its inherent resonant frequency has membrane with thick peripheral base made of silicon doped with boron to concentration of minimum 5 x 1019 cm-3 whose thickness equals that of strain-gage resistors formed on membrane insulating layer and made of silicon doped with boron to same concentration level as membrane; they are interconnected by means of conductors into measurement bridge circuit and have metal-plated contact pads connected to them. Measurement bridge circuit has silicon thermistor. Mechanical stress concentrators are disposed at location points of strain-gage resistors on membrane profile which is, essentially, combination of thickened sections and stiff centers; surfaces of strain-gage resistors and thermistors are coated with silicon dioxide layer. Manufacturing process for pressure transducers of mentioned design is also proposed in invention specification. ^ EFFECT: enhanced reliability, operating stability in wide temperature range, linear conversion range and precision of conversion; facilitated manufacture. ^ 2 cl, 11 dwg |
