| 摘要 |
FIELD: microelectronics; semiconductor detectors for recording radiation of various spectrum bands and charged particles. ^ SUBSTANCE: proposed avalanche photodetector characterized in more extensive optical and electrical isolation of its separate locations has semiconductor layer; second semiconductor layer abutting against first one; dopant regions formed in first semiconductor layer where dopant concentration is higher compared with the latter; depressions made between mentioned regions accommodating insulating layer; as well as conducting electrode, and resistive layer brought in contact with mentioned region and conducting electrode. Depressions and insulating layer disposed therein are extended to second semiconductor layer. ^ EFFECT: enhanced sensitivity and resolution, enlarged functional capabilities of photodetector. ^ 7 cl, 2 dwg
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