| 摘要 |
A method for manufacturing a multi-layered metal wire is provided to prevent undercut and generation of bridges between wires by forming a high concentrated etch buffer layer. A first etch stop layer(102) and first and second dielectrics(104,106) are sequentially stacked on a lower structure(100) of a semiconductor substrate. A high concentrated etch buffer layer(108) is formed on an upper portion of the second dielectric. The high concentrated etch buffer layer and the second dielectric are etched to form a trench. The first dielectric and the first etch stop layer of a lower portion of the trench are etched to form a via hole. A metal is gap-filled into the trench and the via hole. The gap-filled surface is planarized to form a lower metal wire(114) and a via(112). A second etch stop layer(115) and third and fourth dielectrics(116,118) are sequentially stacked on the whole surface of the resultant structure. The fourth dielectric is etched to form a trench(120). The third dielectric and the second etch stop layer of a lower portion of the trench are etched to form a via hole. A metal is gap-filled into the trench and the via hole. The gap-filled surface is planarized to form an upper metal wire and a via vertically connected to the metal wire.
|
