发明名称 |
Smooth fin topology in a FinFET device |
摘要 |
A semiconductor device includes a semiconductor fin formed on an insulator and sidewall spacers formed adjacent the sides of the fin. A gate material layer is formed over the fin and the sidewall spacers and etched to form a gate. The presence of the sidewall spacers causes a topology of the gate material layer to smoothly transition over the fin and the first and second sidewall spacers.
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申请公布号 |
US7112847(B1) |
申请公布日期 |
2006.09.26 |
申请号 |
US20030653227 |
申请日期 |
2003.09.03 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
YU BIN;WANG HAIHONG |
分类号 |
H01L27/01 |
主分类号 |
H01L27/01 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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