SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME DEVICE

摘要

A semiconductor device and a method for manufacturing the same are provided to prevent defects of the device due to nickel oxidation in an annealing process by forming a cobalt film on a nickel film using in-situ processing. A gate structure(300) having a spacer is formed on an active layer of a substrate(100). A source and a drain regions(130) are formed in the active layer by ion-implantation using the gate structure as a mask. A nickel film is then formed on the resultant structure. A cobalt film is deposited on the nickel film by in-situ, and a cobalt silicide layer(400) is then formed by an annealing process.