发明名称 Projection exposure system for microlithography and method for generating microlithographic images
摘要 A method and an arrangement for microlithographic projection exposure at high aperture achieve a contrast increase by the polarization of the light perpendicular to the plane of incidence on the resist. Arrangements are provided which influence the tangential polarization or the linear polarization adapted to the dipole illumination in the illuminating system and in the reduction objective.
申请公布号 US7113260(B2) 申请公布日期 2006.09.26
申请号 US20050248684 申请日期 2005.10.11
申请人 发明人
分类号 G03B27/54;G03B27/42;G03B27/72 主分类号 G03B27/54
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