发明名称 |
Plasma etching system and method |
摘要 |
A system and a process for plasma etching a semiconductor device. The technique comprises periodically applying a heightened voltage bias during the plasma etching process so as to reduce accumulated charge on the surface of the semiconductor device during plasma etching of the device. In one embodiment, a heightened positive voltage and heightened negative voltage is applied to the semiconductor device while plasma etching is occurring to thereby induce charge to be removed from the semiconductor device.
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申请公布号 |
US7112533(B2) |
申请公布日期 |
2006.09.26 |
申请号 |
US20020261920 |
申请日期 |
2002.10.01 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
ABATCHEV MIRZAFER K.;HOWARD BRAD J.;DONOHOE KEVIN G. |
分类号 |
H01L21/302;H01J37/32;H01L21/311 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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