Method of manufacturing chromeless phase shift mask

摘要

A method of manufacturing a chromeless phase shift mask includes forming a photoresist film pattern on a wafer using a basic form of the chromeless phase shift mask and measuring a specification of the photoresist film pattern. The basic form of the chromeless phase shift mask is isotropically etched to modify the phase shifter of the mask unless the photoresist film pattern specification is within a specified range. Accordingly, an application-specific chromeless phase shift mask can be produced for use in any exposure apparatus and under any exposure condition.