发明名称 |
Device for reducing sub-threshold leakage current within a high voltage driver |
摘要 |
A device for reducing the effects of leakage current within electronic devices is disclosed. In one form, a high voltage driver includes a high voltage source coupled to at least one high voltage transistor and a leakage offset module coupled to at least a portion of one of the high voltage transistors. The leakage offset module includes a diode connected MOS device operable to generate an offset voltage and an MOS shunting device coupled in a parallel with the diode connected MOS device. During operation, the diode connected MOS device generates an offset voltage based on a sub-threshold leakage associated with using the high voltage source and the MOS shorting device is operable to short the diode connected MOS device when sub-threshold leakage current is relatively low.
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申请公布号 |
US7113430(B2) |
申请公布日期 |
2006.09.26 |
申请号 |
US20020158991 |
申请日期 |
2002.05.31 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
HOEFLER ALEXANDER;DINH KHOI V.;JENSEN ROBERT A.;RUTLEDGE MATTHEW B. |
分类号 |
G11C16/06;G11C16/08;G11C8/08;G11C16/12;H03K19/003 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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