发明名称 |
CMOS image sensor having prism and method for fabricating the same |
摘要 |
A method for fabricating a CMOS image sensor with a prism includes the steps of: forming a plurality of photodiodes corresponding to respective unit pixels on a substrate; sequentially forming an inter-layer insulation layer and an uppermost metal line on the substrate and the photodiodes; etching the inter-layer insulation layer to form a plurality of trenches corresponding to the respective photodiodes; depositing a high density plasma (HDP) oxide layer such that the HDP oxide layer disposed between the trenches has a tapered profile; depositing a nitride layer having a higher refractive index than that of the inter-layer insulation layer to fill the trenches; and depositing an insulation layer having a lower refractive index than that of the nitride layer to fill the trenches, thereby forming a prism, wherein the prism induces a total reflection of lights incident to the photodiodes disposed in edge regions of a pixel array.
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申请公布号 |
US7112511(B2) |
申请公布日期 |
2006.09.26 |
申请号 |
US20050073192 |
申请日期 |
2005.03.04 |
申请人 |
MAGNACHIP SEMICONDUCTOR, LTD. |
发明人 |
HONG HEE JEONG |
分类号 |
G02B5/04;H01L21/76;H01L21/00;H01L21/336;H01L27/14;H01L27/146;H01L31/10;H04N5/335;H04N5/365;H04N5/369;H04N5/374 |
主分类号 |
G02B5/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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