发明名称 Double side stack packaging method
摘要 In a double side stack packaging a plurality of chips, a hole is formed in a substrate. A first chip is attached to a bottom surface of the substrate by using a thermo compression and is electrically interconnected to terminals formed at sidewall of the hole using a wire bonding. Next, an epoxy is coated on the substrate and the first chip and a first heat spreader is installed thereon and then the epoxy is cured. Thereafter, a second chip is attached to a top surface of the substrate by using the epoxy and is electrically interconnected to terminals formed on the substrate using the wire bonding. And then, an encapsulation resin is coated on the substrate and the first chip and a second heat spreader is installed thereon and then the epoxy is cured.
申请公布号 US7112473(B2) 申请公布日期 2006.09.26
申请号 US20030747195 申请日期 2003.12.30
申请人 DONGBUANAM SEMICONDUCTOR INC. 发明人 LEE NAEWON
分类号 H01L21/44;H01L23/12;H01L21/48;H01L21/98;H01L23/31;H01L25/065;H01L51/50 主分类号 H01L21/44
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