发明名称 |
Method of forming a chalcogenide memory cell having a horizontal electrode and a memory cell produced by the method |
摘要 |
A horizontal electrode having a small cross-section makes electrical contact with a chalcogenide memory element. The dimensions of the cross-section are controlled by conventional deposit/etch semiconductor processing steps. The resulting memory element can be driven by a CMOS steering element.
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申请公布号 |
US7112836(B2) |
申请公布日期 |
2006.09.26 |
申请号 |
US20040802312 |
申请日期 |
2004.03.17 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
CHEN YI CHOU |
分类号 |
H01L29/76;G11C11/56;H01L27/24;H01L29/94;H01L31/062;H01L31/113;H01L31/119;H01L45/00;H01L47/00 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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