| 摘要 |
Disclosed are a connecting method of a sense amplifier and a semiconductor memory device using the same. The semiconductor memory device comprises a memory cell array including a plurality of word lines connected respectively to a plurality of memory cell blocks, each of which is composed of a plurality of memory cells, in a row direction of the memory cells, and a plurality of pairs of bit lines connected respectively to the plurality of memory cell blocks in a column direction of the memory cells; and a plurality of sense amplifier arrays, each of which includes a plurality of sense amplifiers, each of which is connected to bit lines and complementary bit lines of the plurality of pairs of bit lines, for sensing a potential difference between the bit lines and the complementary bit lines.
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