发明名称 |
Semiconductor capacitor with praseodymium oxide as dielectric |
摘要 |
In accordance with the invention there is provided a semiconductor capacitor having a first semiconductor layer which forms a first capacitor electrode and which includes silicon, a second capacitor electrode and a capacitor dielectric including praseodymium oxide between the capacitor electrodes, in which provided between the capacitor dielectric including praseodymium oxide and at least the first semiconductor layer including silicon is a first thin intermediate layer representing a diffusion barrier for oxygen. In particular the thin intermediate layer can include oxynitride.
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申请公布号 |
US7113388(B2) |
申请公布日期 |
2006.09.26 |
申请号 |
US20040511777 |
申请日期 |
2004.10.18 |
申请人 |
MICROELECTRONICS/INSTITUTE FUR INNOVATIVE MIKROELEKTRONIK |
发明人 |
MUESSIG HANS-JOACHIM |
分类号 |
H01G4/228;H01G4/06;H01G4/12;H01G4/30;H01L21/02;H01L21/316;H01L21/822;H01L27/08 |
主分类号 |
H01G4/228 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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