| 摘要 |
A semiconductor device having an ESD(Electro Static Discharge) protection structure is provided to protect from ESD in a region for opening polyimide by contacting directly metal lines with the polyimide layer. A semiconductor substrate(110) is prepared having an ESD protection device. A first insulating layer(160) is formed on the semiconductor substrate. A fuse part having a plurality of fuses and protection layers on the fuses is located on the first insulating layer. A second insulating layer having an opening(200) for fuse is located on the fuse part. Metal lines(140,150) are formed on the second insulating layer and located around of the opening, and connected to the ESD protection device through conductive plugs(132,134) formed through the first insulating layer and the second insulating layer. A passivation layer(170) is formed on a surface of the metal lines except for a region of the metal lines located around of the opening. A polyimide layer(180) is formed on the passivation layer.
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