| 摘要 |
The present invention provides a burner for use in a combustion-type waste gas treatment system for combusting waste gases emitted from semiconductor manufacturing system, particularly, a deposition gas containing SiH<SUB>4 </SUB>and a halogen-base gas, simultaneously at a high efficiency of destruction, making it difficult for a powder of SiO<SUB>2 </SUB>to be attached and deposited, performing a low-NOx combustion, and maintaining a desired level of safety. The combustion-type waste gas treatment system has a flame stabilizing zone ( 15 ), which is open toward a combustion chamber ( 11 ), surrounded by a peripheral wall ( 12 ), and closed by a plate ( 14 ) remotely from the combustion chamber. A waste gas, an auxiliary combustible agent, and air are introduced into and mixed with each other in the flame stabilizing zone ( 15 ), and the mixed gases are ejected toward the combustion chamber ( 11 ) perpendicularly to the plate ( 14 ).
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