发明名称 Bandgap reference current source
摘要 Bandgap reference current source for generating a reference current (I<SUB>REF</SUB>) having: at least two bipolar transistors (T<SUB>1</SUB>, T<SUB>2</SUB>), the base terminals (B<SUB>1</SUB>, B<SUB>2</SUB>) of which are interconnected and connected to a fixed reference potential, the collector terminals (C<SUB>1</SUB>, C<SUB>2</SUB>) of which are connected to a collector current ratio setting circuit ( 15, 16 ), which sets a specific current ratio (m) between the two collector currents (I<SUB>C1</SUB>, I<SUB>C2</SUB>) flowing through the collector terminals (C<SUB>1</SUB>, C<SUB>2</SUB>), and the emitter terminals (E<SUB>1</SUB>, E<SUB>2</SUB>) of which are connected via a first resistor (R<SUB>A</SUB>) to a current node ( 13 ) which adds the emitter currents (I<SUB>E1</SUB>, I<SUB>E2</SUB>) flowing through the emitter terminals (E<SUB>1</SUB>, E<SUB>2</SUB>) to form a summation current (I<SUB>SUM</SUB>), which forms the reference current (I<SUB>REF</SUB>).
申请公布号 US7112947(B2) 申请公布日期 2006.09.26
申请号 US20050045796 申请日期 2005.01.28
申请人 INFINEON TECHNOLOGIES AG 发明人 DRAXELMAYR DIETER
分类号 G05F3/16;G05F1/10;G05F3/26 主分类号 G05F3/16
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