NON-VOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

摘要

A nonvolatile memory device and a method for manufacturing the same are provided to reduce the size of a unit cell by forming a word line at both sides of a source line using anisotropic etching. An isolation layer is formed in a semiconductor substrate(50) to define an active region. A source region(54) is formed at the active region. A source line(58p) is formed on the source region to cross the top of the active region. Word lines(64) are formed at both sidewalls of the source line by using anisotropic etching. A charge storage layer(62) is formed between the word lines and the active region.