发明名称 |
Semiconductor device having a merged region and method of fabrication |
摘要 |
A semiconductor device includes an insulated gate electrode pattern formed on a well region. The semiconductor device further includes a sidewall spacer formed on sidewalls of the gate electrode pattern. A source region and a drain region are formed adjacent opposite sides of the gate pattern. In accordance with one embodiment of the present invention, one of the source or drain regions includes a first-concentration impurity region formed under the sidewall spacer. The semiconductor device further includes a silicide layer formed within the well region wherein at least a part of the silicide layer contacts a portion of the well region to bias the well region. A method of manufacturing the semiconductor device is also provided.
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申请公布号 |
US7112856(B2) |
申请公布日期 |
2006.09.26 |
申请号 |
US20020194181 |
申请日期 |
2002.07.12 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHO KANG-SIK;KIM GYU-CHUL;CHO HOO-SUNG |
分类号 |
H01L21/28;H01L29/76;H01L21/285;H01L21/336;H01L21/74;H01L21/8234;H01L21/8238;H01L27/088;H01L27/092;H01L29/417;H01L29/78 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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