NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A nitride based semiconductor light emitting device and a method for manufacturing the same are provided to prevent drop of an insulating layer and to stably isolate a bonding metal by forming an adhesive layer between the bonding metal and the insulating layer. An n-type nitride semiconductor layer(203) is formed on a substrate(201). An active layer(204) and a p-type nitride semiconductor layer(205) are sequentially formed on the n-type semiconductor layer. A p-type electrode(207) and an n-type electrode(208) are formed on the p-type nitride semiconductor layer and the n-type nitride semiconductor layer, respectively. A first bonding metal(209) and a second bonding metal(210) are formed on the p-type and the n-type electrodes, respectively. An insulating layer(212) is formed on the resultant structure to expose the center portion of the bonding metals. An adhesive layer(211) is formed at the interface between the insulating layer and the first and the second bonding metal.