METHOD FOR FORMING PATTERNS USING PHASE CHANGE MATERIAL AND METHOD FOR REWORK THEREOF

摘要

A pattern forming method and a reworking method thereof are provided to secure a DOF(Depth Of Focus) margin in an exposure process by forming directly a predetermined pattern on a phase change material layer using a phase changing process instead of a conventional patterning process. A phase change material layer is formed on a base member(S120). A phase changing process is selectively performed on the phase change material layer(S130). A phase change material pattern is formed by removing selectively a phase changed portion from the phase change material layer(S140). The phase changing process is performed in order to change partially an amorphous state of the phase change material layer into a crystalline state. The phase change material layer is made of GeSbTe.