Systems and methods for forming zirconium and/or hafnium-containing layers

摘要

A method of forming (and apparatus for forming) a zirconium and/or hafnium-containing layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and one or more silicon precursor compounds of the formula Si(OR)₄ with one or more zirconium and/or hafnium precursor compounds of the formula M(NR'R'')₄, wherein R, R', and R'' are each independently an organic group and M is zirconium or hafnium.