METHOD FOR FORMING ALIGNMENT KEY HAVING CAPPING LAYER AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE USING THE SAME

摘要

An alignment key forming method and a method for manufacturing a semiconductor device using the same are provided to simplify manufacturing processes by omitting an additional mask process using an alignment key with a stepped portion and a capping layer. An isolation layer(241) for defining an active region is formed within a chip region of a semiconductor substrate(200) and an alignment key(245) is formed within a scribe region(205). At this time, a stepped portion is formed between the alignment key and the substrate. A device forming layer is formed on the substrate. A device forming pattern(251) and a capping layer(255) for capping the alignment key are formed on the resultant structure by patterning selectively the device forming layer.