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发明名称
Method for forming titanium silicide ohmic contact layer of semiconductor device
摘要
申请公布号
KR100626741(B1)
申请公布日期
2006.09.22
申请号
KR20000037352
申请日期
2000.06.30
申请人
发明人
分类号
H01L21/28
主分类号
H01L21/28
代理机构
代理人
主权项
地址
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