| 摘要 |
A semiconductor image sensor includes: a semiconductor substrate having a number of pixels disposed in a matrix shape, the semiconductor substrate comprising a first region including a charge accumulation region of a photodiode (PD1, PD2) and a floating diffusion (FD1, FD2) and a second region including transistors (SLT, SFT, RST), each having a gate electrode and source/drain regions; a first silicon oxide film formed above the semiconductor substrate, covering the surface of the charge accumulation region in the first region and formed as side wall spacers (SW) on side of the gate electrode walls of at least some transistors in the second region; and a silicon nitride film formed above the first silicon oxide film, covering the source/drain regions in the second region and having an opening at least in an area above the charge accumulation region in the first region. A semiconductor image sensor is provided which has a high sensitivity and can supply an output with low noise. |
