发明名称 SOLDER ALLOY FOR MANUFACTURING SPUTTERING TARGET AND SPUTTERING TARGET USING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a solder alloy capable of forming a joining material layer having improved heat resistance and joining strength, and to provide a sputtering target capable of consistently and efficiently forming a thin film of a large area to meet a request for increasing the size of a mother glass. <P>SOLUTION: The solder alloy is used for joining a target material with a backing plate when manufacturing a sputtering target, and mainly consists of Sn, comprises 10-25 wt% In and &le;2,000 ppm Ag, and has the solidus temperature of 160-200&deg;C. The solder alloy comprises 10-25 wt% In, and 180-5,000 ppm in total of at least one kind of metal to be selected from a group consisting of Cu, Al, Ti, Mo, W, Te, Pb and Ag (however, Ag : &le;2,000 ppm, and Pb : <1,000 ppm), and Sn may be contained in the balance. <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 KR20060101297(A) 申请公布日期 2006.09.22
申请号 KR20060024107 申请日期 2006.03.15
申请人 MITSUI MINING & SMELTING CO., LTD. 发明人 ONO NAOKI;MORINAKA TAIZO
分类号 C22C13/00;B23K35/24;C23C14/34 主分类号 C22C13/00
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