| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor light emitting element with a structure with improved external quantum efficiency, by taking out effectively light which is attenuated while repeating full reflection in a semiconductor laminated portion and in a board. <P>SOLUTION: The nitride semiconductor light emitting element is provided with a semiconductor laminate 6 including a first conductive layer and a second conductive layer made of a nitride semiconductor on the surface of a substrate 1 made of sapphire as an example. A first electrode (for example, p-side electrode 8) is provided which is connected electrically with the first conductive type layer (for example p-type layer 5) on the surface side of the semiconductor laminate 6, A second electrode (for example, n-side electrode 9) is formed which is connected electrically to a second conductive type layer (for example, n-shaped layer 3). In addition, part of the semiconductor laminate 6 is etched and removed so that each pillar-shaped portion 6a bristled with the semiconductor laminated portion in the pillar shape remains, and the n-shaped layer 3 is exposed around the pillar-shaped portion 6a. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
