SEMICONDUCTOR APPARATUS, LED HEAD AND IMAGE FORMING APPARATUS EMPLOYING IT

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor apparatus in which contact characteristics of an anode wiring layer and a cathode wiring layer as a metal wiring layer and an interlayer dielectric are improved by forming an adhesion layer of Ti having a thickness of 5-500 Å between the interlayer dielectric and the metal wiring layer and the anode wiring layer and the cathode wiring layer can be formed simultaneously in the same process, and to provide an LED head and an image forming apparatus employing it.

SOLUTION: The semiconductor apparatus comprises a semiconductor substrate 21, an interlayer dielectric 23 formed on the semiconductor substrate and having a contact hole opening to the semiconductor substrate, a metal wiring layer 13 having one end connected with the contact hole and the other end constituting a bonding pad, and an adhesion layer 31 of Ti having a thickness of 5-500 Å provided between the interlayer dielectric and the metal wiring layer.

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