PROCESS FOR PRODUCING HIGH PURITY Ti MATERIAL FOR MAGNETRON SPUTTERING APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a production process of a high purity Ti material for obtaining a high reliability semiconductor element by employing a film composed of a Ti nitride in a contact barrier layer, a gate electrode or the like thereby suppressing leak current of a semiconductor element. SOLUTION: In the production process of a high purity Ti material for magnetron sputtering apparatus, Al is removed from a Ti material with its concentration held to 3 ppm or less by electron beam dissolution process in order to form the contact barrier layer composed of a Ti nitride in a semiconductor element having a junction depth of 0.1-0.3μm in the source-drain region with atomic number of 1×1018/cm3or less. COPYRIGHT: (C)2006,JPO&NCIPI