| 摘要 |
PROBLEM TO BE SOLVED: To etch a silicon nitride film into a proper profile while the high selectivity of a silicon oxide film and the silicon nitride film is assured. SOLUTION: A wafer W having the silicon oxide film and the silicon nitride film is placed in a susceptor 13. Then, a mixed gas of CF<SB>4</SB>gas, H<SB>2</SB>gas and N<SB>2</SB>gas is introduced as treating gas in a treatment room S. A high frequency power below 200 W (0.20 W/cm<SP>2</SP>) is applied to the susceptor 13. The pressure in the treatment room S is set to 4 Pa or less, and the silicon nitride film is selectively etched to the silicon oxide film. COPYRIGHT: (C)2006,JPO&NCIPI
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