| 摘要 |
PROBLEM TO BE SOLVED: To enlarge the area of a semiconductor layer being formed on an insulator without employing an SOI substrate. SOLUTION: After a padding insulation layer 10 is formed in a cavity 9 between a semiconductor substrate 1 and a second semiconductor layer 3 by thermally oxidizing the semiconductor substrate 1 and the second semiconductor layer 3 in the cavity 9 through an opening 7, an opening 7' for exposing the sidewall of the second semiconductor layer 3 around the opening 7 is formed, and after an amorphous semiconductor is formed on a support 5 to fill the opening 7', source/drain layers 25a and 25b are formed on the second semiconductor layer 3 and a padding semiconductor layer 13. COPYRIGHT: (C)2006,JPO&NCIPI
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