发明名称 |
Ito film treated by nitrogen plasma and the organic luminescent device using the same |
摘要 |
Disclosed are an Indium Tin Oxide (ITO) film, wherein nitrogen-containing compounds produced by reactions of nitrogen with at least one atom selected from the group consisting of In, Sn and O atoms which are constitutional elements of ITO, or deposited nitrogen-containing compounds are present on a surface of the ITO film; and a method for preparing an ITO film, comprising the step of treating a surface of the ITO film with nitrogen plasma. An organic electroluminescent device using the ITO film provided by the present invention as an anode shows a low voltage, a high efficiency and a long lifetime.
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申请公布号 |
US2006209529(A1) |
申请公布日期 |
2006.09.21 |
申请号 |
US20050555056 |
申请日期 |
2005.10.28 |
申请人 |
SON SE HWAN;KANG MIN SOO;JEON SANG YOUNG;KIM JONG GEOL |
发明人 |
SON SE HWAN;KANG MIN SOO;JEON SANG YOUNG;KIM JONG GEOL |
分类号 |
F21V9/16;H05B33/26;H01B1/08;H01L51/00;H01L51/44;H01L51/50;H01L51/52;H05B33/28 |
主分类号 |
F21V9/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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