MOSFET WITH TEMPERATURE SENSE FACILITY

摘要

A transistor (1) has a FET (2) and a temperature sensing diode (4) integrated within it. Gate drive circuit (12) is arranged to switch off FET (2) and in this case biasing circuit (14) drives a constant current through the diode (4). The voltage across the diode (4) is measured by voltage sensor (15) which provides a measure of the temperature of the FET.