METHOD FOR FABRICATING RESERVOIR CAPACITOR OF SEMICONDUCTOR DEVICE,申请号KR20050022579-传众专利搜索

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发明名称	METHOD FOR FABRICATING RESERVOIR CAPACITOR OF SEMICONDUCTOR DEVICE
摘要
申请公布号	KR20060100778(A)	申请公布日期	2006.09.21
申请号	KR20050022579	申请日期	2005.03.18
申请人	HYNIX SEMICONDUCTOR INC.	发明人	WOO, TAKE KYUN;KIM, YOUNG SEOK;PARK, KANG TAE
分类号	H01L21/8242	主分类号	H01L21/8242
代理机构		代理人
主权项
地址

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