发明名称 SEMICONDUCTOR POWER MODULE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a semiconductor power module excellent in economical efficiency and having a large current capacity by improving the reliability of a semiconductor chip for a thermal cycle, using Pb-free solder and simplifying a structure. <P>SOLUTION: Using an insulating substrate 2 on which a metallic wiring pattern 22 is formed on one surface and a metallic conductor 23 formed on the other surface with an insulating layer 21 sandwiched, a semiconductor chip 1 is joined to the pattern 22 on the one surface using low-melting point Pb free solder 3. A heat sink 4 is bonded to the metallic conductor 23 on the other surface of the insulting substrate 2 by using a high-temperature conductive adhesive 5 having a thermal conductivity of 2 W/(mK) or more. In this way, the necessity of two kinds of conventional solder having different melting points is eliminated, and the use of Pb-free solder, the reduction of thermal resistance to the heat sink 4, and reliability and economical efficiency are all achieved. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p>
申请公布号 JP2006253183(A) 申请公布日期 2006.09.21
申请号 JP20050063638 申请日期 2005.03.08
申请人 HITACHI LTD 发明人 HASHIMOTO KEITA;SUWA TOKIHITO;SETO SADAYUKI;SHIGETA SATORU;FUJINO SHINICHI
分类号 H01L25/07;H01L25/18 主分类号 H01L25/07
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