| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile memory element capable of reducing the area of cells, while preventing an increase in the channel length of the nonvolatile memory cell due to the formation of a selector gate on both walls of a floating gate, and preventing a reduction in cell current, and to provide its manufacturing method and a manufacturing method of semiconductor elements using the same. <P>SOLUTION: A nonvolatile memory element includes a substrate; a tunnel insulating film formed on the substrate, a floating gate formed on the tunnel insulating film, a dielectric film formed to cover the upper part and one wall of the floating gate, a selector gate formed on one wall of the dielectric film, and source/drain regions formed on the substrate exposed to either one of the selector gate and the floating gate. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
