| 摘要 |
PROBLEM TO BE SOLVED: To control a concentration of a donor impurity or an acceptor impurity in a processing object in which a doping is carried out by using an ion doping system, and to reduce a dispersion of the concentration. SOLUTION: The adopted doping method comprises the steps of obtaining a dose amount D<SB>1</SB>of total ions necessary for obtaining a peak concentration Y corresponding to a variation of a proportion X of an ion from a first relational expression concerning the peak concentration Y of an impurity, in a first processing object in which a doping is carried out in a proportion X (0<X<1) of ions of a compound including the donor impurity or the acceptor impurity in total ions requested from a mass spectrum; and doping the ion to a second processing object by using materials gas used in the case of the doping and by using the dose amount of the total ions as a value of D<SB>1</SB>calculated in the above described step, and by using an acceleration voltage as a predetermined value in the case of the doping. COPYRIGHT: (C)2006,JPO&NCIPI
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