| 摘要 |
PROBLEM TO BE SOLVED: To provide an FET which is provided with an n-type semiconductor made of an organic and easy-to-manufacture material and is superior in mobility and on/off ratio. SOLUTION: The FET is provided with at least a source electrode, a drain electrode, a gate electrode, and an n-type organic semiconductor. The n-type organic semiconductor includes a high molecular compound having a repetitive unit shown in a chemical formula (1). In the formula (1), R<SP>1</SP>to R<SP>6</SP>stand for an hydrogen atom, a halogen atom, or a univalent organic group, independently. At least one of R<SP>1</SP>to R<SP>6</SP>is a substitutional alkyl group with a carbon number 4 of four or more. The reference symbol M stands for metal atom or metal ion, and L stands for a ligand coordinated in the M. The reference symbol n is an integer of≥0 and≤3, and B is a counter ion and m is an integer of≥0 and≤3. COPYRIGHT: (C)2006,JPO&NCIPI
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