发明名称 MASK AND METHOD OF MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a mask capable of being made large in size by improving the strength of a silicon mask, which is made thin in thickness, and to provide a method of manufacturing the mask. SOLUTION: The mask M for depositing a thin film having a predetermined pattern with respect to a substrate for film deposition comprises a mask base material S consisting of silicon, a reinforcing base material H adhered to one main surface MB of the mask base material S to reinforce the mask base material S, and an opening part 24 formed through the mask base material S and the reinforcing base material H corresponding to the predetermined pattern. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006249489(A) 申请公布日期 2006.09.21
申请号 JP20050066784 申请日期 2005.03.10
申请人 SEIKO EPSON CORP 发明人 YOTSUYA SHINICHI
分类号 C23C14/04;C23C14/24;H01L51/50;H05B33/10 主分类号 C23C14/04
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