Semiconductor device and manufacturing method of the same

摘要

A semiconductor device includes an N-type semiconductor region formed in a semiconductor substrate; a p-type semiconductor region formed in a region deeper in the semiconductor substrate than the N-type semiconductor region; and a heavy metal capturing region formed in a portion of the p-type semiconductor region to capture heavy metal ions. The heavy metal capturing region may be a P-type region. It is preferable that the diffusion speed of the heavy metal ions is slower in the heavy metal capturing region than in the p-type semiconductor region.