| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve reliability by increasing the bonding intensity for a pad electrode, even in the case of thinning the film thickness of multilayer wiring, in a CMOS solid state imaging device. <P>SOLUTION: The solid state imaging device comprises a pixel 22 consisting of a photoelectric conversion element 33 and a transistor 38, and multilayer wiring 36 connected to the pixel 22. A pad electrode 25 connected to the multilayer wiring 36 is formed with lamination films (362', 363'). <P>COPYRIGHT: (C)2006,JPO&NCIPI |
