MANUFACTURING METHOD OF ALUMINUM-BASED GROUP III NITRIDE CRYSTAL, AND CRYSTAL LAMINATE SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of an Al-based group III nitride crystal wherein the crystal quality of a Twist-component is made good when subjecting on a substrate the Al-based group III nitride crystal to an epitaxial growth, for the purpose of the vapor-phase epitaxial-growth method type manufacture of an Al-based group III crystal whose raw material is an Al-based halogenation-material gas.

SOLUTION: The vapor-phase epitaxial-growth method type manufacture of an Al-based group III nitride crystal uses group III halogenation-material gas containing aluminum halide. Such an Al-based group III halogenation-material gas as aluminum trichloride is fed previously to the surface of a substrate, and such a nitrogen-source gas as an ammonia gas is fed next onto the substrate together with the Al-based group III halogenation-material gas that the halogenation-material gas and the nitrogen-source gas react on each other, and that the Al-based group III nitride crystal is subjected to an epitaxial growth.

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