发明名称 |
PIXEL STRUCTURE, ACTIVE MATRIX SUBSTRATE, MANUFACTURING METHOD OF ACTIVE MATRIX SUBSTRATE, ELECTROOPTICAL DEVICE, AND ELECTRONIC APPARATUS |
摘要 |
PROBLEM TO BE SOLVED: To provide a pixel structure which is hardly influenced by thermal limitations of a semiconductor layer in manufacturing process and advantageous for cost reduction. SOLUTION: The pixel structure comprises a pixel electrode 20 and a switching element 10 corresponding to the pixel electrode 20. The pixel electrode 20 and the switching element 10 are formed on one and the same substrate P, and the pixel electrode 20 is arranged on a layer (a first layer L1) closer to the substrate P compared with the semiconductor layer 11 of the switching element 10. COPYRIGHT: (C)2006,JPO&NCIPI |
申请公布号 |
JP2006251120(A) |
申请公布日期 |
2006.09.21 |
申请号 |
JP20050064988 |
申请日期 |
2005.03.09 |
申请人 |
SEIKO EPSON CORP |
发明人 |
DENDA ATSUSHI;NODA YOICHI |
分类号 |
G09F9/30;G02F1/1343;G02F1/1368;G09F9/00;H01L21/288;H01L21/3205;H01L21/336;H01L29/786 |
主分类号 |
G09F9/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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