| 摘要 |
PROBLEM TO BE SOLVED: To provide an organic ferroelectric memory in which a fabrication process is facilitated, and to provide its fabrication method. SOLUTION: The organic ferroelectric memory 100 comprises a memory cell 114 of thin film transistor structure and a thin film transistor 112 for controlling the memory cell 114, wherein the memory cell 114 is formed above the thin film transistor 112 and includes an organic semiconductor layer 140, an organic ferroelectric layer 150, a gate electrode 160, a source electrode 120, and a drain electrode 122. COPYRIGHT: (C)2006,JPO&NCIPI
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