| 摘要 |
PROBLEM TO BE SOLVED: To provide MEMS system having MEMS device formed using a material requiring heat treatment of a melting point of Al or higher. SOLUTION: In the MEMS system comprising a semiconductor device formed with a multi-layer electrode 20, a wiring electrode 28 or the like and the MEMS device integrally formed on the semiconductor device, the multi-layer electrode, the wiring electrode 28 and the like of the semiconductor device are formed by the material bearing to the high temperature heat treatment applied at formation of the MEMS device onto the semiconductor device. COPYRIGHT: (C)2006,JPO&NCIPI
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