| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a field emission type electron source, where the occurrence of dispersion of electron emission characteristics are suppressed. <P>SOLUTION: A cathode wiring layer 2 is formed on a substrate 1. A field emission film 3 is formed on the cathode wiring layer 2. An insulating film 4 is formed on the electron emitting film 3. An opening 200 is formed in a gate electrode film 5. An opening 100, extending from the gate electrode film 5 toward the electron emission film 3, is formed in the insulating film 4. The insulating film 4 has projection parts 20, projecting inwardly, from the inside surface of the opening 200 of the gate electrode 5. The ratio of the projection width Wgi (min) of the projection part 20 with respect to the gate opening size Wg is 0-5%. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
