| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device with SOI structure for restricting the mixture of ion which tends to run through a fractional separation insulating film at ion implantation. SOLUTION: In the semiconductor device; a gate electrode, an impurity diffusion region, a body potential fixed region, a first insulating film, and a dummy gate electrode are formed on an SOI substrate made of a silicon supporting substrate, a buried insulating film and a semiconductor layer. Body potential fixed region is arranged in a direction of an extended line as the elongated direction of the gate electrode of the semiconductor layer, and a second conductive type impurity reverse to the first conductive type one is implanted. The first insulating film is formed at a part between at least the body potential fixed region in the semiconductor layer and the gate electrode. The dummy gate electrode is located between the body potential fixed region and the gate electrode and on the first insulating film. COPYRIGHT: (C)2006,JPO&NCIPI |
