| 摘要 |
PROBLEM TO BE SOLVED: To provide a field effect organic thin film transistor which has film-formation characteristics and sufficient flexibility, and in which drain current can be generated with low power. SOLUTION: This organic thin film transistor comprises a substrate, a gate electrode, a gate insulating layer, a source electrode, a drain electrode, and an organic semiconductor layer. The gate insulating layer comprises a first insulating layer in contact with the organic semiconductor layer, and a second insulating layer in contact with the gate electrode. COPYRIGHT: (C)2006,JPO&NCIPI
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