| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device and a manufacturing method thereof wherein such wiring faultiness as a short circuit generated between its wirings is prevented. SOLUTION: The manufacturing method of the semiconductor device has a process for depositing first successively on a semiconductor substrate 101 an interlayer insulation film 102 and a diffusion preventing insulation film 103, a process for forming then wiring grooves 104 in the diffusion preventing insulation film 103 and the interlayer insulation film 102, a process for forming next a barrier metal film 105a to cover the wiring grooves 104 with it, a process for removing next in a polishing way the barrier metal film 105a present on the diffusion preventing insulation film 103 to leave each barrier metal 105 in each wiring groove 104, a process for forming next a Cu film 106a to fill it into the wiring grooves 104, a process for removing next in a polishing way the Cu film 106a present on the diffusion preventing insulation film 103 to leave each Cu film 106 in each wiring groove 104 having each recess B, a process for forming next a cap film 108a to fill it into the recesses B, and a process for polishing thereafter the cap film 108a to leave selectively in each recess B each cap film 108. COPYRIGHT: (C)2006,JPO&NCIPI
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